DATE:	1/21/2009		RECIPE:	STDSI		Operator	Gordon
Tool ID:	PD01
Process:	Amorphous Silicon
TEMP:	200 C	DEP TIME	10	min	PRCPR	900 mTorr	Power	50 W
GAS	2% SiH4	GAS	He
FLOW	400	FLOW	600
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:		Ellip. T=127.3 nm n0 = 3.09 n1 = 5321 n2 = -4326 k0 = 0.397 k1 = -2483 k2 = 7095
Nanospec
POSITION	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
center	1273	1284	1255	1265	1289	1273.2	13.83	1.09	1.34
						Dep Rate:	127.32	A/min