DATE:	8/12/2009		RECIPE:	LSNIT		Operator	Gordon
Tool ID:	PD01
Process:	Low Stress PECVD Silicon Nitride
TEMP:	250 C	DEP TIME	10	min	PRCPR	900 mTorr	Power	100 W
GAS	2%	GAS	NH3	GAS	N2	GAS	He
FLOW	200	FLOW	4	FLOW	200	FLOW	600
WAFER:	4" SILICON
SIZE	100mm	Substrate:	<100>
LOAD	1	Comment:
Ellipsomter
POSITION	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
center	1037	1034	1041	1038	1027	1035.4	5.32	0.51	0.68
						Dep Rate:	103.54	A/min