DATE:	5/12/2009		RECIPE:	LSNIT		Operator	Gordon
Tool ID:	PD01
Process:	Low Stress PECVD Silicon Nitride
TEMP:	250 C	DEP TIME	10	min	PRCPR	900 mTorr	Power	100 W
GAS	2% SiH4	GAS	NH3	GAS	N2	GAS	He
FLOW	200	FLOW	4	FLOW	200	FLOW	600
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:		Nanospec T=95.9 nm
Ellipsomter
POSITION	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
center	1021	1029	1014	1014	1026	1020.8	6.83	0.67	0.73
						Dep Rate:	102.08	A/min