DATE:	1/21/2009		RECIPE:	LSNIT		Operator	Gordon
Tool ID:	PD01
Process:	Low Stress PECVD Silicon Nitride
TEMP:	250 C	DEP TIME	10	min	PRCPR	900 mTorr	Power	100 W
GAS	2% SiH4	GAS	NH3	GAS	N2	GAS	He
FLOW	200	FLOW	4	FLOW	200	FLOW	600
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:		Ellip. T=111 nm n0 = 1.804 n1 = 101.9 n2 = 17.1
Nanospec
POSITION	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
center	1040	1052	1022	1036	1044	1038.8	11.10	1.07	1.44
						Dep Rate:	103.88	A/min