DATE:	3/4/2008		RECIPE:	LSNIT		Operator	Gordon
Tool ID:	PD01
Process:	Low Stress PECVD Silicon Nitride
TEMP:	250 C	DEP TIME	10	min	PRCPR	900 mTorr	Power	100 W
GAS	2% SiH4	GAS	NH3	GAS	N2	GAS	He
FLOW	200	FLOW	4	FLOW	200	FLOW	600
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:		Ellip. T=118.6 nm n0 = 1.805 n1 = 120.4 n2 = 1.1
Nanospec
POSITION	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
center	1064	1038	1026	1056	1058	1048.4	15.84	1.51	1.81
						Dep Rate:	104.84	A/min