DATE:	12/6/2007		RECIPE:	LSNIT		Operator	Gordon
Tool ID:	PD01
Process:	Low Stress PECVD Silicon Nitride
TEMP:	250 C	DEP TIME	10	min	PRCPR	900 mTorr	Power	100 W
GAS	2% SiH4	GAS	NH3	GAS	N2	GAS	He
FLOW	200	FLOW	4	FLOW	200	FLOW	600
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:		Ellip. T=141.38 nm n0 = 1.766 n1 = 89 n2 = 1
Nanospec
POSITION	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
center	1292	1266	1254	1284	1286	1276.4	15.84	1.24	1.49
				Wafer to	Wafer	1276.4	15.84	1.24	1.49
						Dep Rate:	127.64	A/min