DATE:	7/15/2009		RECIPE:	Oxide_Etch_CHF3		Operator	Arnold Duenes
Tool ID:	PE04
Process:	Standard Oxide Etch
TEMP:	20 C	Etch Time	1	min	PRCPR	10 mTorr	ICP Pwr	800 W	Bias Pwr	100 W
GAS	CHF3		GAS	Ar
FLOW	40		FLOW	10
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:
Nanospec
Measure	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
Pre	4561	4550	4573	4581	4559	4564.8	12.21	0.27	0.34
Post	1725	1801	1716	1671	1781	1738.8	52.34	3.01	3.74
Delta	2836	2749	2857	2910	2778	2826.0	63.93	2.26	2.85
						Etch Rate:	2826.00	A/min