DATE:	7/14/2009		RECIPE:	Oxide_Etch_CHF3		Operator	Arnold Duenes
Tool ID:	PE04
Process:	Standard Oxide Etch
TEMP:	20 C	Etch Time	1	min	PRCPR	10 mTorr	ICP Pwr	800 W	Bias Pwr	100 W
GAS	CHF3		GAS	Ar
FLOW	40		FLOW	10
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:
Nanospec
Measure	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
Pre	4565	4553	4575	4583	4561	4567.4	11.78	0.26	0.33
Post	1717	1795	1711	1652	1764	1727.8	54.71	3.17	4.14
Delta	2848	2758	2864	2931	2797	2839.6	66.13	2.33	3.05
						Etch Rate:	2839.60	A/min