DATE:	1/30/2009		RECIPE:	Oxide_Etch_CHF3		Operator	Arnold Duenes
Tool ID:	PE04
Process:	Standard Oxide Etch
TEMP:	20 C	Etch Time	1	min	PRCPR	10 mTorr	ICP Pwr	800 W	Bias Pwr	100 W
GAS	CHF3		GAS	Ar
FLOW	40		FLOW	10
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:
Nanospec
Measure	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
Pre	4572	4562	4587	4604	4578	4580.6	15.93	0.35	0.46
Post	1672	1728	1668	1690	1740	1699.6	32.75	1.93	2.12
Delta	2900	2834	2919	2914	2838	2881.0	41.69	1.45	1.48
						Etch Rate:	2881.00	A/min