DATE:	11/17/2008		RECIPE:	Oxide_Etch_CHF3		Operator	Arnold Duenes
Tool ID:	PE04
Process:	Standard Oxide Etch
TEMP:	20 C	Etch Time	1	min	PRCPR	10 mTorr	ICP Pwr	800 W	Bias Pwr	100 W
GAS	CHF3		GAS	Ar
FLOW	40		FLOW	10
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:
Nanospec
Measure	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
Pre	4581	4564	4583	4599	4576	4580.6	12.66	0.28	0.38
Post	1736	1789	1715	1733	1781	1750.8	32.36	1.85	2.11
Delta	2845	2775	2868	2866	2795	2829.8	42.47	1.50	1.64
						Etch Rate:	2829.80	A/min