| DATE: | 11/29/2007 | RECIPE: | Oxide_Etch_CHF3 | Operator | Gordon | ||||
| Process: | Standard Oxide Etch | ||||||||
| TEMP: | 25 | PRCPR | 5 mTorr | Etch TIME | 60 | sec | |||
| ICP Pwr: | 800 | GAS | CHF3 | GAS | O2 | GAS | Ar | ||
| Bias Pwr: | 100 | FLOW | 40 | FLOW | 10 | FLOW | 10 | ||
| WAFER: | 4" SILICON | ||||||||
| Run | Material | Pre Ave | Pre SD | Post Ave | Post SD | Etch Rate | |||
| 1 | SiO2 | 6200 | 9 | 3532 | 22 | 2668.0 | A/min | ||
| Wafer to | Wafer | 2668.0 | A/min | ||||||
| Run | Material | Pre Ave | Pre SD | Post Ave | Post SD | Etch Rate | |||
| 1 | Poly | 4644 | 74 | 2506 | 63 | 2138.0 | A/min | ||
| Wafer to | Wafer | 2138.0 | A/min | ||||||