DATE:	11/17/2008		RECIPE:	Nitride_SF6		Operator	Arnold Duenes
Tool ID:	PE04
Process:	SF6 Nitride Etch
TEMP:	20 C	Etch TIME	1	min	PRCPR	5 mTorr	ICP Pwr	300 W	Bias Pwr	50 W
GAS	SF6
FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:		LPCVD Nitride pilot
Nanospec
Measure	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
Pre	1540	1531	1560	1566	1544	1548.2	14.46	0.93	1.13
Post	1144	1155	1185	1192	1170	1169.2	20.04	1.71	2.05
Delta	396	376	375	374	374	379.0	9.54	2.52	2.90
						Etch Rate:	379.00	A/min
Measure	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
Pre	1144	1155	1185	1192	1170	1169.2	20.04	1.71	2.05
Post	679	747	775	789	765	751.0	43.06	5.73	7.32
Delta	465	408	410	403	405	418.2	26.30	6.29	7.41
						Etch Rate:	418.20	A/min
				Wafer to	Wafer	398.6	27.83	6.98	11.41