DATE:	6/25/2008		RECIPE:	Nitride_SF6		Operator	Gordon
Tool ID:	PE04
Process:	SF6 Nitride Etch
TEMP:	20 C	Etch TIME	1	min	PRCPR	5 mTorr	ICP Pwr	300 W	Bias Pwr	50 W
GAS	SF6
FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:		LPCVD Nitride pilot
Nanospec
Measure	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
Pre	4276	4557	4944	4940	4466	4636.6	296.66	6.40	7.20
Post	3827	4162	4509	4487	4014	4199.8	297.08	7.07	8.12
Delta	449	395	435	453	452	436.8	24.46	5.60	6.64
						Etch Rate:	436.80	A/min
Measure	Center	Top	Left	Flat	Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
Pre	3827	4162	4509	4487	4014	4199.8	297.08	7.07	8.12
Post	3388	3725	4059	4053	3601	3765.2	291.55	7.74	8.91
Delta	439	437	450	434	413	434.6	13.50	3.11	4.26
						Etch Rate:	434.60	A/min
				Wafer to	Wafer	435.7	18.66	4.28	6.66