DATE:	6/25/2008		RECIPE:	Nitride_Etch_900Amin_using_CHF3				Operator	Gordon
Tool ID:	PE04
Process:	Nitride Etch using CHF3
TEMP:	20 C	Etch TIME	1	min	PRCPR	5 mTorr	ICP Pwr	300 W	Bias Pwr	50 W
GAS	CHF3	GAS		GAS		GAS
FLOW	20	FLOW	20	FLOW		FLOW
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:		LPCVD Nitride pilot
Nanospec
Measure	1Center	2Top	3Left	4Flat	5Right	Mean Avg	S1 Dev	+ or - %	HI-LO%
Pre	5976	6201	6581	6533	6045	6267.2	277.34	4.43	4.83
Post	5253	5470	5848	5836	5363	5554.0	273.91	4.93	5.36
Delta	723	731	733	697	682	713.2	22.59	3.17	3.58
						Etch Rate:	713.20	A/min