| DATE: | 8/21/2009 | Operator | John Maynard | ||||||
| Process: | Cryo Evap: Aluminum | ||||||||
| Target | 3000A | ||||||||
| TEMPC: | 25 | ||||||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | <100> | ||||||
| LOAD | 1 | Comment | |||||||
| Run | CENTER | TOP | LEFT | FLAT | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% |
| 1 | 3035 | 3038 | 3060 | 2964 | 2991 | 3017.6 | 39.04 | 1.29 | 1.59 |
| Sheet R | 0.386 | + / - % | 0.981 | Ohm/sq | |||||
| Resistivity | 1.16E-05 | Ohm-cm | |||||||
| Bulk Al | 2.82E-06 | Ohm-cm | |||||||