| DATE: | 5/14/2009 | Operator | John Maynard | ||||||
| Process: | Cryo Evap: Aluminum | ||||||||
| Target | 3000A | ||||||||
| TEMPC: | 25 | ||||||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | <100> | ||||||
| LOAD | 1 | Comment | Sheet resistance = 473 mOhm/sq +-3.5% | ||||||
| Run | CENTER | TOP | LEFT | FLAT | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% |
| 1 | 2927 | 2826 | 3069 | 3063 | 3067 | 2990.4 | 109.96 | 3.68 | 4.06 |
| Sheet R | 0.473 | + / - % | 3.5 | Ohm/sq | |||||
| Resistivity | 1.41E-05 | Ohm-cm | |||||||
| Bulk Al | 2.82E-06 | Ohm-cm | |||||||