| DATE: | 2/20/2009 | Operator | John Maynard | ||||||
| Process: | Cryo Evap: Aluminum | ||||||||
| Target | 3000A | ||||||||
| TEMPC: | 25 | ||||||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | 100 | ||||||
| LOAD | 1 | Comment | Sheet resistance = 168 mOhm/sq +-2.1% | ||||||
| Run | CENTER | TOP | LEFT | FLAT | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% |
| 1 | 2943 | 2763 | 2700 | 2794 | 2812 | 2802.4 | 89.40 | 3.19 | 4.34 |
| Sheet R | 0.168 | + / - % | 2.1 | Ohm/sq | |||||
| Resistivity | 4.71E-06 | Ohm-cm | |||||||
| Bulk Al | 2.82E-06 | Ohm-cm | |||||||