| DATE: | 11/13/2008 | Operator | John Maynard | ||||||
| Process: | Cryo Evap: Aluminum | ||||||||
| Target | 1000A | ||||||||
| TEMPC: | 25 | ||||||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | 100 | ||||||
| LOAD | 1 | Comment | Sheet resistance = 345.1 mOhm/sq +-9.77% | ||||||
| Run | CENTER | TOP | LEFT | FLAT | RIGHT | Mean Avg | S1 Dev | + or - % | HI-LO% |
| 1 | 2396 | 1456 | 2224 | 2468 | 2392 | 2187.2 | 418.45 | 19.13 | 23.13 |
| Sheet R | 0.345 | + / - % | 0.48 | Ohm/sq | |||||
| Resistivity | 7.55E-06 | Ohm-cm | |||||||
| Bulk Al | 2.82E-06 | Ohm-cm | |||||||