| DATE: | 9/15/2009 | Operator | John Maynard | ||||||
| Process: | CHA-50 Evap: Aluminum | ||||||||
| Target: | 3000A | ||||||||
| TEMPC: | 25 | ||||||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | <100> | ||||||
| LOAD | 1 | Comment | |||||||
| Run | CENTER | TOP | LEFT | FLAT | RIGHT | Mean | S1 Dev | + or - % | HI-LO% |
| 1 | 2967 | 2910 | 2873 | 2897 | 2949 | 2919.2 | 38.36 | 1.31 | 1.61 |
| Sheet R | 0.22 | + / - % | 2.97 | Ohm/sq | |||||
| Resistivity | 6.422E-06 | Ohm-cm | |||||||
| Bulk Al | 2.82E-06 | Ohm-cm | |||||||