| DATE: | 8/21/2009 | Operator | John Maynard | ||||||
| Process: | CHA-50 Evap: Aluminum | ||||||||
| Target: | 3000A | ||||||||
| TEMPC: | 25 | ||||||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | <100> | ||||||
| LOAD | 1 | Comment | |||||||
| Run | CENTER | TOP | LEFT | FLAT | RIGHT | Mean | S1 Dev | + or - % | HI-LO% |
| 1 | 3953 | 3912 | 3990 | 3602 | 3824 | 3856.2 | 154.95 | 4.02 | 5.03 |
| Sheet R | 0.159 | + / - % | 1.17 | Ohm/sq | |||||
| Resistivity | 6.131E-06 | Ohm-cm | |||||||
| Bulk Al | 2.82E-06 | Ohm-cm | |||||||