DATE:	5/14/2009		Operator	John Maynard
Process:	CHA-50 Evap: Aluminum
Target:	3000A
TEMPC:	25
WAFER:	4" SILICON
SIZE	100mm	Substrate:	<100>
LOAD	1	Comment:
Run	CENTER	TOP	LEFT	FLAT	RIGHT	Mean	S1 Dev	+ or - %	HI-LO%
1	3002	3015	3032	3047	3055	3030.2	21.95	0.72	0.87
					Sheet R	0.19	+ / - %	0.693	Ohm/sq
					Resistivity	5.757E-06	Ohm-cm
					Bulk Al	2.82E-06	Ohm-cm