| DATE: | 2/25/2009 | Operator | John Maynard | ||||||
| Process: | CHA-50 Evap: Aluminum | ||||||||
| Target: | 3000A | ||||||||
| TEMPC: | 25 | ||||||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | 100 | ||||||
| LOAD | 1 | Comment | Ran low on aluminum | ||||||
| Run | CENTER | TOP | LEFT | FLAT | RIGHT | Mean | S1 Dev | + or - % | HI-LO% |
| 1 | 2567 | 2498 | 2509 | 2537 | 2491 | 2520.4 | 31.40 | 1.25 | 1.51 |
| Sheet R | 0.378 | + / - % | 0.31 | Ohm/sq | |||||
| Resistivity | 9.527E-06 | Ohm-cm | |||||||
| Bulk Al | 2.82E-06 | Ohm-cm | |||||||