| DATE: | 11/13/2008 | Operator | John Maynard | ||||||
| Process: | CHA-50 Evap: Aluminum | ||||||||
| Target: | 1000A | ||||||||
| TEMPC: | 25 | ||||||||
| WAFER: | 4" SILICON | ||||||||
| SIZE | 100mm | Substrate: | 100 | ||||||
| LOAD | 1 | Comment | Sheet resistance = 739.1 mOhm/sq +-1.21% | ||||||
| Run | CENTER | TOP | LEFT | FLAT | RIGHT | Mean | S1 Dev | + or - % | HI-LO% |
| 1 | 1045 | 1052 | 900 | 1035 | 1044 | 1015.2 | 64.68 | 6.37 | 7.49 |
| Sheet R | 0.739 | + / - % | 0.48 | Ohm/sq | |||||
| Resistivity | 7.5E-06 | Ohm-cm | |||||||
| Bulk Al | 2.82E-06 | Ohm-cm | |||||||