DATE:	11/7/2008		RECIPE:	Aluminum		Operator	Arnold
Gun #:	2		FILE:	AlGun2_200W60min
Process:	Aluminum Deposition, RF		DC
PowerW	200	DEP TIME	60	min
TEMPC:	25	GAS	Ar
Pressure	4mTorr	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:	Sheet resistance =  101.6 mOhm/sq +- 0.51%
Run	CENTER	TOP	LEFT	FLAT	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
1	3250	3402	3505	3243	3074	3294.8	165.17	5.01	6.54
				Wafer to	Wafer	3294.8	165.17	5.01	6.54
						Dep Rate:	54.91	A/min
						Sheet R	0.1016	Ohm/sq	+ / - %	0.51
						Resistivity	3.35E-06	Ohm-cm
						Bulk Al	2.82E-06	Ohm-cm