DATE:	6/26/2008		RECIPE:	Aluminum		Operator	Gordon
Gun #:	4		FILE:	AlGun4_200W60min
Process:	Aluminum Deposition, RF
PowerW	200	DEP TIME	60	min
TEMPC:	25	GAS	Ar
Pressure	4mTorr	FLOW	20
WAFER:	4" SILICON
SIZE	100mm	Substrate:	100
LOAD	1	Comment:	Sheet resistance =  107.4 mOhm/sq +- 0.48%
Run	CENTER	TOP	LEFT	FLAT	RIGHT	Mean Avg	S1 Dev	+ or - %	HI-LO%
1	3313	3303	3400	3445	3397	3371.6	61.19	1.82	2.11
				Wafer to	Wafer	3371.6	61.19	1.82	2.11
						Dep Rate:	56.19	A/min
						Sheet R	0.1074	Ohm/sq	+ / - %	0.48
						Resistivity	3.62E-06	Ohm-cm
						Bulk Al	2.82E-06	Ohm-cm